Three-Phase

Solutions

onsemi offers a wide variety of power integrated modules to ensure the high-power density including SiC hybrid module, IGBT module and full SiC module. Our continuous investment in packaging technologies grants the modules leading thermal performance, improving power density, reduce parasitic effect and simplifying design.

SiC Solutions

onsemi Solutions for Medium Voltage Systems Including Solid State Transformers

The increased availability of 1700V – 2000V SiC MOSFETs is opening new design methods of grid infrastructure and end applications such as DC fast chargers (DCFC) and solar.

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Industry First PLECS Models

Novel Silicon Carbide (SiC) Simulation Reduces Development Time

onsemi’s new Elite Power Simulator provides an accurate representation of how their circuit will work using our EliteSiC family of products including manufacturing corner cases of the EliteSiC technology.

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Topologies

Topologies for Commercial String Solar Inverter

Learn more about overview of commercial string solar inverter system, mainstream topologies, and how onsemi's infrastructure-class power semiconductor and module technologies are allowing for string inverters with high power density.

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Quality and Reliability

onsemi’s SiC Products Ensure Quality and Reliability

SiC material is not new, but the industry doesn’t have the same level of manufacturing data for SiC as silicon. Our SiC product qualifications and reliability testing approaches enable us to deliver high-quality and reliable SiC products to customers.

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Three-Phase String Inverter Systems

Find out more about Three-phase string inverter systems, architecture, and technologies.

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Full SiC & Hybrid SiC Modules

Our package technologies are optimized for superior performance, lower thermal resistance than discrete devices, and easy mounting packages that fit industry standard pinouts.

Hybrid Modules Full SiC Modules

IGBT Modules

The IGBT Modules portfolio is optimized for DC-AC stages of solar inverters. These state of the art products utilize the new narrow mesa IGBT technology in providing high current density and robust short circuit protection along with higher blocking voltage to deliver outstanding performance.

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Evaluation/Development Kits

SECO-HVDCDC1362-15W-GEVB

15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications

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SECO-HVDCDC1362-40W-GEVB

40 W SiC high-voltage auxiliary power supply for HEV & BEV applications

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SECO-GDBB-GEVB

Gate drivers plug-and-play ecosystem

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SECO-LVDCDC3064-SIC-GEVB

6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified NCV3064 Controller Evaluation Board

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SECO-LVDCDC3064-IGBT-GEVB

6 - 18 Vdc Input Isolated IGBT Gate Driver Supply +15 V / -7.5 V / 7.5 V with Automotive Qualified NCV3064 Controller

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Technical Documents

Performance Comparison of 1200V SiC MOSFET and Si IGBT Used in Power Integrated Module for 1100 V Solar Boost Stage

This application note compares the performance of two power integrated modules (PIMs) in the boost stage of an 1100 V solar inverter

Silicon Carbide (SiC) - From Challenging Material to Robust Reliability

This white paper will introduce the reader to the onsemi Quality and Reliability methodology deployed from first design to mass production

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

Efficient power electronic design hinges on the availability of accurate and predictive SPICE models

Mounting Considerations For Power Semiconductors

Current and power ratings of semiconductors are inseparably linked to their thermal environment

onsemi M1 1200V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced

NCD(V)57000/57001Gate Driver Design Note

The NCD(V)5700x is a high−current single channel gate driver with internal galvanic isolation, designed for high system efficiency

SiC MOSFETs: Gate Drive Optimization

For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages

Top Cool Package for Power Discrete MOSFETs

In power applications, the majority of MOSFETs utilized tend to be surface mount devices (SMD). Some package examples

Design and Application Guide of Bootstrap Circuit for High-Voltage Gate-Drive IC

The purpose of this paper is to demonstrate a systematic approach to design high−performance bootstrap gate drive

Analysis of Power Dissipation and Thermal Considerations for High Voltage Gate Drivers

Gate drivers used to switch MOSFETs and IGBTs at high frequencies can dissipate significant amount of power

Half-Bridge LLC Resonant Converter Design Using NCP4390/NCV4390

Among many resonant converters, LLC resonant converter has been the most popular topology for high

FAN9672/FAN9673 Tips and Tricks

FAN967x is multi−channel interleaved continuous− conduction−mode (CCM) power−factor−correction (PFC)

Design of a 100 W Active Clamp Forward DC-DC Converter for Telecom Systems Using the NCP1562

The NCP1562 PWM controller contains all the features and flexibility needed to implement an active clamp forward

Current Sense Amplifiers, Frequently Asked Questions (FAQ)

The following questions are typical questions that ON Semiconductor’s application support team answers on the topic of

Topologies for Commercial String Solar Inverter

With the continuous explosion of civilization and population density, the increasing rate of CO2 emissions begin to become uncontrollable

Optimizing Residential Solar Energy Systems for Efficiency, Reliability, and Cost

The California 2022 Building Energy Efficiency Standards are the first US building codes to mandate solar for new residential homes

SiC Simulations

In this paper, we will focus more on results obtained only through simulation and how to use the results in some high

Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator

The purpose of this application note is to explain the technical advantages included in the online Elite Power Simulator

onsemi EliteSiC Gen2 1200V SiC MOSFET M3S Series

This white paper will introduce the reader to the onsemi Quality and Reliability methodology deployed from first design to mass production

Three-Phase

Solutions

onsemi Solutions for Medium Voltage Systems Including Solid State Transformers

Novel Silicon Carbide (SiC) Simulation Reduces Development Time

Topologies for Commercial String Solar Inverter

onsemi’s SiC Products Ensure Quality and Reliability

Three-Phase String Inverter Systems

Full SiC & Hybrid SiC Modules

IGBT Modules

Related Products

Silicon Carbide (SiC) Modules

Si/SiC Hybrid Modules

IGBT Modules

Silicon Carbide (SiC) Diodes

Silicon Carbide (SiC) MOSFET

IGBTs

Gate Drivers

High Speed Logic Gate Optocouplers

Low Voltage, High Performance Optocouplers

Current Sense Amplifiers

Operational Amplifiers (Op Amps)

Optoelectronic Isolated Error Amplifiers

Evaluation/Development Kits

SECO-HVDCDC1362-15W-GEVB

SECO-HVDCDC1362-40W-GEVB

SECO-GDBB-GEVB

SECO-LVDCDC3064-SIC-GEVB

SECO-LVDCDC3064-IGBT-GEVB

Technical Documents

Performance Comparison of 1200V SiC MOSFET and Si IGBT Used in Power Integrated Module for 1100 V Solar Boost Stage

Silicon Carbide (SiC) - From Challenging Material to Robust Reliability

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

Mounting Considerations For Power Semiconductors

onsemi M1 1200V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

NCD(V)57000/57001Gate Driver Design Note

SiC MOSFETs: Gate Drive Optimization

Top Cool Package for Power Discrete MOSFETs

Design and Application Guide of Bootstrap Circuit for High-Voltage Gate-Drive IC

Analysis of Power Dissipation and Thermal Considerations for High Voltage Gate Drivers

Half-Bridge LLC Resonant Converter Design Using NCP4390/NCV4390

FAN9672/FAN9673 Tips and Tricks

Design of a 100 W Active Clamp Forward DC-DC Converter for Telecom Systems Using the NCP1562

Current Sense Amplifiers, Frequently Asked Questions (FAQ)

Topologies for Commercial String Solar Inverter

Optimizing Residential Solar Energy Systems for Efficiency, Reliability, and Cost

SiC Simulations

Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator

onsemi EliteSiC Gen2 1200V SiC MOSFET M3S Series

Videos

Related Articles

onsemi Completes Expansion of Silicon Carbide Production Facility in Bucheon, South Korea

Meeting the Demand for Next-Generation Silicon Carbide Devices

onsemi Secures $1.95B in Supply Agreements with Leading Solar Inverter Manufacturers

Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator

Advantages of ON Semiconductor’s Leading Silicon Carbide (SiC) MOSFETs Solutions

Next-Generation onsemi 1200 V EliteSiC M3S Devices Enhance Efficiency of Electric Vehicles and Energy Infrastructure Applications

Achieving Robust Reliability with a Challenging Material—Silicon Carbide (SiC)

Wide Bandgap Technology Enables Future Solar Power Solutions