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ICSCRM 2023

Tradeshow Registration

September 17-22, 2023

Hilton Sorrento Palace, Sorrento, Italy

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Event Details

Together with our end-to-end SiC manufacturing capabilities, onsemi EliteSiC products offer superior performance and exacting quality standards of products.

Come visit us in the Amalfi boardroom and learn more from our experts or book your private meeting.

About ICSCRM

From 2023, ICSCRM becomes an annual scientific event that explores, presents, and discusses the newest achievements in the field of wide-bandgap semiconductors focusing on silicon carbide (SiC) and other wide bandgap semiconductors. The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic, and public sectors. More than 800 delegates are expected.

Presentations by onsemi at ICSCRM 2023

Presenter

Title

Day and Time

Remark

Location

Session

Kwangwon Lee

Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure

September 19th
4:30PM - 6:30PM

Poster

17C

Thanh-Toan Pham

1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On

September 19th
2:30PM - 2:50PM

Auditorium Sirene

Peter Moens

Unique Failure Mode of SiC MOSFETs under Accelerated HTRB

September 21st
2:30PM - 2:50PM

Kevin Cho

Normally-off 1200V Silicon Carbide JFET Diode with Low V_F

September 18th
12:00PM - 12:20PM

Marina Avramenko

Threshold voltage variation of SiC trench MOSFETs during TDDB stress

September 18th
4:00PM - 6:00PM

Poster

Youngbin Im

SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control

September 18th
4:00 PM - 6:00 PM

Poster

ChungJung Kim

Carbon control method in SIC MOSFET with Chlorine and Vth stability

September 20th
2:30PM - 4:30PM

Poster

Hrishikesh Das

The Role of Defects on SiC Device Performance and Ways to Mitigate Them

September 19th
8:30AM - 9:00AM

INVITED

Petr Kostelnik

Understanding the Material Loss in the Laser Based SiC Wafer

September 20th
4:30PM - 6:00PM

Poster

Radim Spetik

Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries

September 19th
4:30PM - 6:30PM

Poster

Kyeongseok Park

Next step in SiC technology

September 22nd
2:00PM - 2:40PM

Plenary

Auditorium Sirene

Sara Kochoska

Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters

September 18th
4:00PM - 6:00PM

Poster

Jimin Lee

Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET

September 18th
4:00PM - 6:00PM

Poster

Jaume Roig Guitart

On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs

September 21st
11:20AM - 11:40AM

Auditorium Sirene

1-25 of 25

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