Silicon Carbide (SiC)


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Next-Generation onsemi 1200 V EliteSiC M3S Devices

SCOTTSDALE, Ariz. – May 9, 2023 – onsemi (Nasdaq: ON), a leader in intelligent power and sensing technologies, today announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost.


onsemi Unveils World’s First TOLL-packaged 650 V SiC MOSFET

PHOENIX – May 10, 2022 – onsemi (Nasdaq: ON), a leader in intelligent power and sensing technologies today announced the world’s first TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET at PCIM Europe. The transistor addresses the rapidly growing need for high-performance switching devices that are suitable for designs with high levels of power density. Until recently, SiC devices had been supplied in D2PAK 7-lead packages which required significantly more space.

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Related Product:  NTBL045N065SC1 



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