NVBG045N065SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK−7L

Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

Automotive DC/DC
Automotive PFC

End Products

Automotive On Board Charger
Automotive DC/DC converter for EV/PHEV

Features

Qualified for Automotive According to AEC−Q101
650V rated
High Speed Switching and Low Capacitance
100% UIL Tested
Devices are RoHS Compliant
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 25A

Material Composition

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Blocking Voltage BV_DSS (V)

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Reference Price

NVBG045N065SC1

Active

D2PAK7 (TO-263-7L HV)

245

REEL

800

650

105

168

175

$10.5773

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Silicon Carbide (SiC) MOSFETs | NVBG045N065SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK−7L

Overview

Product List

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