NTHL160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

PFC
Boost Inverter
PV Charging

End Products

Solar Inverter
Network Power Supply
Charging Stations
Motor Control

Features

High Speed Switching and Low Capacitance
Max RDS(on) = 224mΩ at Vgs = 20V, Id = 12A
1200V
100% UIL Tested

Material Composition

Product Change Notification

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Blocking Voltage BV_DSS (V)

I_D(max) (A)

R_DS(on) Typ @ 25°C (mΩ)

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T_j Max (°C)

Reference Price

NTHL160N120SC1

Active

TO-247-3LD

340CX

TUBE

450

1200

160

175

$3.9743

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Silicon Carbide (SiC) MOSFETs | NTHL160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

Overview

Product List

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