NTHL020N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-3L

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

PFC
Boost Inverter
PV Charging

End Products

Solar Inverter
Network Power Supply
Server Power Supply
Charging Stations

Features

Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
High Speed Switching and Low Capacitance
1200V
100% UIL Tested

Material Composition

Product Change Notification

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Blocking Voltage BV_DSS (V)

I_D(max) (A)

R_DS(on) Typ @ 25°C (mΩ)

Q_g Total (nC)

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T_j Max (°C)

Reference Price

NTHL020N120SC1

Active

TO-247-3LD

340CX

TUBE

450

1200

103

203

260

175

$21.93

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Silicon Carbide (SiC) MOSFETs | NTHL020N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-3L

Overview

Product List

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