Silicon Carbide (SiC) Diodes | FFSD08120A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK

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Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • Max Junction Temperature 175 °C
  • Avalanche Rated 80 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

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FFSD08120A

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

D1

Single

1200

8

1.75

77

200

$2.4243

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Reliability Data

Die Related Summary Data

Device: FFSD08120A

Equivalent to wafer fab process: SIC

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

1674603084

0.6

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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