IGBT Modules | NXH160T120L2Q2F2S1

Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A

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Overview

The NXH160T120L2Q2F2SG is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160A/1200V half-bridge IGBTs with inverse diodes, two neutral point 120A/1200V rectifiers, two 100A/650V neutral point IGBTs with inverse diodes, two half-bridge 60A/650V rectifiers and a negative temperature coefficient thermistor (NTC).

  • DC-AC Stage

  • Solar Inverter
  • UPS

  • 650 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 uJ
  • 1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 uJ
  • Baseplate
  • Solderable Pins
  • T−type Neutral Point Clamped Three−level Inverter Module
  • Thermistor

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NXH160T120L2Q2F2S1G

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Active

CAD Model

Pb

A

H

P

Q2

180AK

NA

0

BTRAY

36

Split T-Type Inverter

1200

160

2.1

2.2

Industrial

$102.2872

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Reliability Data

Die Related Summary Data

Device: NXH160T120L2Q2F2S1G

Equivalent to wafer fab process: TRENCH IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH IGBT

0

8782900981

3814360512

0.26

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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