High Voltage MOSFETs | NTMT185N60S5H

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, Power88

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Overview

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8 x 8 mm2). SUPERFET V MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers moisture Sensitivity Level 1 (MSL 1).

  • Computing
  • Consumer
  • Industrial

  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD TV / LED TV
  • LED Lighting / Ballast
  • Adapter

  • Fast switching performance with robust body diode
  • Ultra Low Gate Charge (Typ. Qg = 25 nC)
  • Low Time Related Output Capacitance (Typ. COSS(tr.) = 372 pF)
  • Leadless Ultra-thin SMD package
  • Kelvin Source Configuration
  • Moisture Sensitivity Level 1 guarantee
  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 148 m Ω
  • 100% Avalanche Tested
  • RoHS Compliant
  • Internal Gate Resistance: 0.9 Ω

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Package Name

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

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Reference Price

NTMT185N60S5H

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Active

CAD Model

Pb

A

H

P

TDFN4 8.00x8.00x1.00, 2.00P

520AB

1

260

REEL

3000

F

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

600

185

30

4.3

15

116

~NA~

~NA~

~NA~

25

1350

~NA~

2400

25

2

$2.193

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Reliability Data

Die Related Summary Data

Device: NTMT185N60S5H

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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