IGBT, Ultra Field Stop

Active

Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.

  • Solar inverterUPSWelding

  • Extremely Efficient Trench with Field Stop Technology• TJmax = 175°C• Soft Fast Reverse Recovery Diode• Optimized for High Speed Switching• These are Pb−Free Devices

Product Resources

Product services, tools and other useful resources related to FGH40T120SQDNL4

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH40T120SQDNL4

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

FS7

1200

40

1.78

3.4

1.1

2.7

166

9

221

0

-

227

Yes

$4.9141

More Details

Show More

1-25 of 25

Products per page

Jump to :

Product Support

If you're interested to learn about this onsemi product, contact sales by filling out the form below.