General Purpose and Low VCE(sat) Transistors | BD139

1.5 A, 80 V NPN Power Bipolar Junction Transistor

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Overview

This series of plastic, NPN Power Bipolar Junction Transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

  • Audio amplification

  • Audio amplifiers

  • Mininum Current Gain - hFE = 40 @ IC = 150 mA
  • BD135, BD137, BD139 are complementary with BD136, BD138, BD140
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD139

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

NPN

General Purpose

0.5

1.5

80

-

-

-

-

40

250

-

12.5

Price N/A

More Details

BD139G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

NPN

General Purpose

0.5

1.5

80

100

5

-

1

40

250

-

12.5

$0.34

More Details

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Reliability Data

Die Related Summary Data

Device: BD139G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

232182620

4.31

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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