NDT456P

P-Channel Enhancement Mode Field Effect Transistor

Overview

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

Applications

This product is general usage and suitable for many different applications.

Features

-7.5 A, -30 V
R_DS(ON) = 0.030 Ω @ V_GS = -10 V
R_DS(ON) = 0.045 Ω @ V_GS = -4.5 V
High density cell design for extremely low R_DS(ON)
High power and current handling capability in a widely used surface mount package

Material Composition

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Product List

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_d Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

NDT456P

Active

SOT-223-4 / TO-261-4

318H-01

260

REEL

4000

P-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

-30

-3

-7.5

1440

$0.8533

Product Number:

Distributor		Stock	BUY

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Small Signal MOSFETs | NDT456P

P-Channel Enhancement Mode Field Effect Transistor

Overview

Product List

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