FDC642P

P-Channel PowerTrench^® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

Overview

This P-Channel 2.5V specified MOSFET is produced using an PowerTrench^® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(ON) = 65mΩ at V_GS = -4.5 V, I_D = -4.0A
Max r_DS(ON) = 100mΩ at V_GS = -2.5 V, I_D = -3.2A
Fast switching speed.
Low gate charge (11nC typical).
High performance trench technology for extremely low r_DS(ON).
SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
Termination is Lead-free and RoHS Compliant

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_d Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

FDC642P

Active

TSOT-23-6

419BL

260

REEL

3000

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

Single

-20

-1.5

-4

1.6

100

700

$0.1657

Product Number:

Distributor		Stock	BUY

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Small Signal MOSFETs | FDC642P

P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

Overview

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P-Channel PowerTrench^® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ